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MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC

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MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC

Name: MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC
Brand: onsemi
Price: 1 USD

China MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC wholesale

Brand Name : onsemi

Model Number : MMUN2214LT1G

Place of Origin : Shenzhen,China

MOQ : 1pcs

Price : Consultant

Payment Terms : T/T

Supply Ability : 10000pcs/day

Delivery Time : In Stock

Packaging Details : Standard Box

Description : Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Warranty : 365days

Quality : 100% original Brand

Condition : Original Product

Shipping By : China Post/DHL/FEDEX/UPS/TNT/DPEX/KAS

High Light : Diode Transistor MMUN2214LT1G, Pre Biased Diode Transistor, 50V bipolar junction diode

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MMUN2214LT1G Bipolar junction Diode Transistor Pre Biased 100mA 50V BRT NPN IC

Product description

Part number MMUN2214LT1G is manufactured by Onsemi Company and distributed by AYE. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.

For more information on MMUN2214LT1G detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity to your message.

Product details/Parameters

Manufacturer:	onsemi
Product Category:	Bipolar Transistors - Pre-Biased
Configuration:	Single
Transistor Polarity:	NPN
Typical Input Resistor:	10 kOhms
Typical Resistor Ratio:	0.21
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
DC Collector/Base Gain hfe Min:	80
Collector- Emitter Voltage VCEO Max:	50 V
Continuous Collector Current:	0.1 A
Peak DC Collector Current:	100 mA
Pd - Power Dissipation:	246 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MMUN2214L
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
DC Current Gain hFE Max:	80
Height:	0.94 mm
Length:	2.9 mm
Product Type:	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity:	3000
Subcategory:	Transistors
Width:	1.3 mm
Unit Weight:	0.000282 oz

advantages

1. Parts source determine price, The source of our parts is very initial.

2. Price can be negotiable based on quantity; delivery terms;

3. We will try to help customers to reduce freight charge.

4. The price of products changes frequently, if you need to quote price, please inform the model which you need,we will give you the reasonable price as the standard quoted price in the same day

MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC

FAQ

1. How long is your lead time?

It depends. Normally, it is 2-6 working days if the goods are in stock, or it is 7-40 days if

the goods not in stock.

2. What is your terms of payment ?

For small amount orders, 100% better paid by PayPal or T/T in advance. For large

amount orders like more than

10000USD, 30% T/T in advance , balance fully paid before shipment.

3. Do you have any MOQ limit for an order?

Yes, we have MOQ. different items have different MOQ. We will mark MOQ when we

quote.

4. How to proceed an order?

Firstly, let us know your requirements or application. Secondly, we quote according to

your requirements or our suggestions. Thirdly, customer confirms the samples and pay

deposit for the official order. Finally, we arrange the production and ship once it's ready.

5. Do you accept Alibaba online orders?

Sure!! We prefer to fulfil orders under Alibaba Trade Assurance system, since both

parties will be protected.

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MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC

MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC

MMUN2214LT1G bipolar transistors

bipolar transistors Pre Biased

bipolar junction transistor 100mA 50V

MMUN2214LT1G Bipolar Junction Transistors Pre Biased 100mA 50V BRT NPN IC Images